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TDA1563 データシート(PDF) 9 Page - NXP Semiconductors

部品番号 TDA1563
部品情報  2 x 25 W high efficiency car radio power amplifier
Download  32 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1563 データシート(HTML) 9 Page - NXP Semiconductors

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2000 Feb 09
9
Philips Semiconductors
Product specification
2
× 25 W high efficiency car radio power
amplifier
TDA1563Q
AC CHARACTERISTICS
VP = 14.4 V; RL =4 Ω; CSE = 1000 µF; f = 1 kHz; Tamb =25 °C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Po
output power
THD = 0.5%
15
19
W
THD = 10%
23
25
W
EIAJ
38
W
VP = 13.2 V; THD = 0.5%
16
W
VP = 13.2 V; THD = 10%
20
W
THD
total harmonic distortion
Po = 1 W; note 1
0.1
%
Pd
dissipated power
see Figs 10 and 11
W
Bp
power bandwidth
THD = 1%; Po = −1dB
with respect to 15 W
20 to 15 000
Hz
fro(l)
low frequency roll-off
−1 dB; note 2
25
Hz
fro(h)
high frequency roll-off
−1 dB
130
−−
kHz
Gv
closed loop voltage gain
Po = 1 W
25
26
27
dB
SVRR
supply voltage ripple rejection
Rs =0 Ω; Vripple = 2 V (p-p)
on/mute
45
65
dB
standby; f = 100 Hz to 10 kHz 80
−−
dB
CMRR
common mode rejection ratio
Rs =0 Ω−
80
dB
Z
i
input impedance
90
120
150
k
∆Z
i
mismatch in input impedance
1
%
VSE-BTL
SE to BTL switch voltage level
note 3
3
V
Vo(mute) output voltage mute (RMS value)
Vi = 1 V (RMS)
100
150
µV
Vn(o)
noise output voltage
on; Rs =0 Ω; note 4
100
150
µV
on; Rs =10kΩ; note 4
105
−µV
mute; note 5
100
150
µV
αcs
channel separation
Rs =0 Ω; Po =15W
40
70
dB
∆Gv
channel unbalance
−−
1dB


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