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TDA1563 データシート(PDF) 9 Page - NXP Semiconductors |
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TDA1563 データシート(HTML) 9 Page - NXP Semiconductors |
9 / 32 page 2000 Feb 09 9 Philips Semiconductors Product specification 2 × 25 W high efficiency car radio power amplifier TDA1563Q AC CHARACTERISTICS VP = 14.4 V; RL =4 Ω; CSE = 1000 µF; f = 1 kHz; Tamb =25 °C; measured in Fig.7; unless otherwise specified. Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequency response externally fixed (input capacitors determine low frequency roll-off). 3. The SE to BTL switch voltage level depends on VP. 4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage is independent of Rs. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Po output power THD = 0.5% 15 19 − W THD = 10% 23 25 − W EIAJ − 38 − W VP = 13.2 V; THD = 0.5% − 16 − W VP = 13.2 V; THD = 10% − 20 − W THD total harmonic distortion Po = 1 W; note 1 − 0.1 − % Pd dissipated power see Figs 10 and 11 W Bp power bandwidth THD = 1%; Po = −1dB with respect to 15 W − 20 to 15 000 − Hz fro(l) low frequency roll-off −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off −1 dB 130 −− kHz Gv closed loop voltage gain Po = 1 W 25 26 27 dB SVRR supply voltage ripple rejection Rs =0 Ω; Vripple = 2 V (p-p) on/mute 45 65 − dB standby; f = 100 Hz to 10 kHz 80 −− dB CMRR common mode rejection ratio Rs =0 Ω− 80 − dB Z i input impedance 90 120 150 k Ω ∆Z i mismatch in input impedance − 1 − % VSE-BTL SE to BTL switch voltage level note 3 − 3 − V Vo(mute) output voltage mute (RMS value) Vi = 1 V (RMS) − 100 150 µV Vn(o) noise output voltage on; Rs =0 Ω; note 4 − 100 150 µV on; Rs =10kΩ; note 4 − 105 −µV mute; note 5 − 100 150 µV αcs channel separation Rs =0 Ω; Po =15W 40 70 − dB ∆Gv channel unbalance −− 1dB |
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