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FM22L16-55-TG データシート(PDF) 7 Page - Ramtron International Corporation |
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FM22L16-55-TG データシート(HTML) 7 Page - Ramtron International Corporation |
7 / 15 page FM22L16 Rev. 1.0 Mar. 2007 Page 7 of 15 Software Write Protect Timing SRAM Drop-In Replacement The FM22L16 has been designed to be a drop-in replacement for standard asynchronous SRAMs. The device does not require /CE to toggle for each new address. /CE may remain low indefinitely. While /CE is low, the device automatically detects address changes and a new access is begun. This functionality allows /CE to be grounded as you might with an SRAM. It also allows page mode operation at speeds up to 40MHz. Note that if /CE is tied to ground, the user must be sure /WE is not low at powerup or powerdown events. If /CE and /WE are both low during power cycles, data corruption will occur. For applications that require the lowest power consumption, the /CE signal should be active only during memory accesses. The FM22L16 draws IDD supply current while /CE is low, even if addresses and control signals are static. While /CE is high, the device draws no more than the maximum standby current ISB. The FM22L16 is backward compatible with the 1Mbit FM20L08 and 256Kbit FM18L08 devices. That is, operating the FM22L16 with /CE toggling low on every address is perfectly acceptable. The /UB and /LB byte select pins are active for both read and write cycles. They may be used to allow the device to be wired as a 512Kx8 memory. The upper and lower data bytes can be tied together and controlled with the byte selects. Individual byte enables or the next higher address line A(18) may be available from the system processor. Figure 3. FM22L16 Wired as 512Kx8 |
同様の部品番号 - FM22L16-55-TG |
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同様の説明 - FM22L16-55-TG |
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