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FM22L16-55-TG データシート(PDF) 1 Page - Ramtron International Corporation

部品番号 FM22L16-55-TG
部品情報  4Mbit FRAM Memory
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メーカー  RAMTRON [Ramtron International Corporation]
ホームページ  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM22L16-55-TG データシート(HTML) 1 Page - Ramtron International Corporation

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Preliminary
This is a product that has fixed target specifications but are subject
Ramtron International Corporation
to change pending characterization results.
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.0
http://www.ramtron.com
Mar. 2007
Page 1 of 15
FM22L16
4Mbit FRAM Memory
Features
4Mbit Ferroelectric Nonvolatile RAM
Organized as 256Kx16
Configurable as 512Kx8 Using /UB, /LB
10
14 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation to 40MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 256Kx16 SRAM Pinout
55 ns Access Time, 110 ns Cycle Time
Advanced Features
Low VDD Monitor Protects Memory against
Inadvertent Writes
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
Low Current Mode (5µA) using ZZ pin
18 mA Active Current
Industry Standard Configuration
Industrial Temperature -40
° C to +85° C
44-pin “Green”/RoHS TSOP-II package
Description
The FM22L16 is a 256Kx16 nonvolatile memory that
reads
and
writes
like
a
standard
SRAM.
A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM22L16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM22L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM22L16 includes a low voltage monitor that
blocks access to the memory array when VDD drops
below a critical threshold. The memory is protected
against an inadvertent access and data corruption
under this condition. The device also features
software-controlled write protection. The memory
array is divided into 8 uniform blocks, each of which
can be individually write protected.
The device is available in a 400 mil 44-pin TSOP-II
surface mount package. Device specifications are
guaranteed over industrial temperature range –40°C
to +85°C.
Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
A13
A14
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
WE
VDD
A15
A16
A17
CE
A12
/ZZ
OE
A7
A6
A5
VSS
DQ12
DQ11
DQ8
DQ9
DQ10
LB
A8
A9
A10
A11
VDD
UB
DQ13
DQ14
DQ15
Ordering Information
FM22L16-55-TG
55 ns access, 44-pin
“Green”/RoHS TSOP-II


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