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MCZ79076EG データシート(PDF) 6 Page - Freescale Semiconductor, Inc |
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MCZ79076EG データシート(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 13 page Analog Integrated Circuit Device Data 6 Freescale Semiconductor 79076 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS EST Threshold Voltage (10) (Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) Increasing Decreasing Hysteresis VTH+(EST) VTH-(EST) VHYS(EST) 1.65 0.8 0.79 1.86 0.89 0.97 2.0 - - V Ref/Dwell Current (11) (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) Ref/Dwell Voltage = 1.0 V Ref/Dwell Voltage = 20 V I(R/D) -12 -1.0 -1.38 0.02 1.0 5.0 µA Ref/Dwell Clamp Voltage (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) IR/D = 100µA (Sourcing) IR/D = 1.0mA (Sourcing) V(R/D)CL -0.01 -0.62 -0.04 -0.54 0.2 - V Ref/Dwell Threshold (Bypass Mode) (12) (Advance = 1.0 V, EST = Bypass = 0 V, Reference = sinking 10 µA) Increasing Decreasing Hysteresis VTH+(R/D)BP VTH-(R/D)BP VHYS(R/D)BP VB + 0.09 VB + 0.018 0.055 VB + 0.106 VB + 0.03 0.076 VB + 0.116 - - V Ref/Dwell Threshold (EST Mode) (12) (Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V, Reference = sinking 10 µA) Increasing Decreasing Hysteresis VTH+(R/D)EST VTH-(R/D)EST VHYS(R/D)EST VB + 0.445 VB + 0.038 0.395 VB + 0.50 VB + 0.062 0.436 VB + 0.535 - - V Ref/Dwell Threshold (No Pump) (13) (Advance = 1.0 V, EST = Bypass = 0 V, Dwell = sinking 10 mA) Increasing Decreasing Hysteresis VTH+(R/D)NP VTH-(R/D)NP VHYS(R/D)NP VB + 0.003 VB + 0.021 VB + 0.013 VB + 0.118 VB + 0.047 VB + 0.072 VB + 0.128 - - V Notes 10. EST Threshold Voltage is the positive (or negative) going voltage on EST necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(EST) and is in reference to ground. 11. Ref/Dwell can either source or sink current; A minus sign denotes the Ref/Dwell is sourcing current. 12. Ref/Dwell Threshold Voltage (Bypass Mode) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Reference voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 13. Ref/Dwell Threshold Voltage (No Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Advance = 1.0 V providing no input assist or "No Pump" influence of Dwell signal; Reference open. Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ V CC ≤ 18 V, - 40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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