Analog Integrated Circuit Device Data

Freescale Semiconductor

7

79076

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Ref/Dwell Threshold (Max Pump) (14)

10 mA, Dwell Control = open)

Increasing

Decreasing

Hysteresis

-

V

OUTPUTS

Bias Resistance to Ground

Advance = 1.0 V, EST = Bypass = 0 V

0.55

0.68

0.9

k

Ω

Bias Voltage (Bypass Mode)

Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V

2.25

2.43

2.6

V

Bias Voltage Regulation (Bypass Mode)

Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V

-

30

40

mV

Bias Voltage (EST Mode)

3.0 V

1.9

2.04

2.2

V

Dwell Saturation Voltage

EST = Bypass = 0 V

EST = Bypass = 0 V

EST = Bypass = 3.0 V

EST = Bypass = 3.0 V

-

-

-

-

0.05

0.14

0.20

0.29

0.1

0.24

0.35

0.5

V

Dwell Reverse Clamp Voltage (15)

-0.9

-0.98

-1.2

V

Dwell Leakage Current (16)

Bypass = 0, Bias Voltage = Reference = open

-

0.044

50

µA

Reference Low (17)

0 V

-

0.13

0.22

V

Notes

14.

Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to

the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of

Dwell signal; Reference = Dwell Control = open.

15.

All pins open except Pwr Gnd with Dwell sinking 200 mA.

16.

Limit conditions with Dwell output NPN in the OFF condition.

17.

Reference saturation voltage to ground with 0.3mA of current going into the Reference.

Table 2. Static Electrical Characteristics (continued)

≤ V

Characteristic

Symbol

Min

Typ

Max

Unit