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FM18L08 データシート(PDF) 4 Page - Ramtron International Corporation

部品番号 FM18L08
部品情報  256Kb Bytewide FRAM Memory
Download  13 Pages
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メーカー  RAMTRON [Ramtron International Corporation]
ホームページ  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM18L08 データシート(HTML) 4 Page - Ramtron International Corporation

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FM18L08
Rev. 3.4
July 2007
4 of 13
must remain high for at least the minimum precharge
timing specification.
The user dictates the beginning of this operation since
a precharge will not begin until /CE rises. However,
the device has a maximum /CE low time specification
that must be satisfied.
FRAM Design Considerations
When designing with FRAM for the first time, users
of SRAM will recognize a few minor differences.
First, bytewide FRAM memories latch each address
on the falling edge of chip enable. This allows the
address bus to change after starting the memory
access. Since every access latches the memory
address on the falling edge of /CE, users cannot
ground it as they might with SRAM.
Users who are modifying existing designs to use
FRAM should examine the memory controller for
timing compatibility of address and control pins.
Each memory access must be qualified with a low
transition of /CE. In many cases, this is the only
change
required.
An
example
of
the
signal
relationships is shown in Figure 2 below. Also shown
is a common SRAM signal relationship that will not
work for the FM18L08.
The reason for /CE to strobe for each address is two-
fold: it latches the new address and creates the
necessary precharge period while /CE is high.
Address 1
Address 2
Data 1
Data 2
Valid Memory Signaling Relationship
CE
Address
Data
FRAM
signaling
Address 2
Data 1
CE
Address
Data
SRAM
signaling
Invalid Memory Signaling Relationship
Address 1
Data 2
Figure 2. Memory Address Relationships


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