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FM18L08 データシート(PDF) 1 Page - Ramtron International Corporation

部品番号 FM18L08
部品情報  256Kb Bytewide FRAM Memory
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メーカー  RAMTRON [Ramtron International Corporation]
ホームページ  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM18L08 データシート(HTML) 1 Page - Ramtron International Corporation

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.4
July 2007
1 of 13
FM18L08
256Kb Bytewide FRAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
45 year Data Retention
Unlimited Read/Write Cycles
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Superior to Battery-Backed SRAM
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
140 ns Cycle Time
Low Power Operation
3.0V to 3.65V Operation
15 mA Active Current
15
µA Standby Current
Industry Standard Configuration
Industrial Temperature -40
° C to +85° C
32-pin “Green” TSOP Package
28-pin SOIC or DIP Package
“Green” Packaging Options
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 45 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.
Pin Configurations
Ordering Information
FM18L08-70-TG
70 ns access, 32-pin “Green” TSOP
FM18L08-70-S
70 ns access, 28-pin SOIC
FM18L08-70-P
70 ns access, 28-pin DIP
FM18L08-70-SG
70 ns access, 28-pin “Green” SOIC
FM18L08-70-PG
70 ns access, 28-pin “Green” DIP
TSOP-I
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
NC
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
NC


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