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FM18L08-70-TG データシート(PDF) 7 Page - Ramtron International Corporation

部品番号 FM18L08-70-TG
部品情報  256Kb Bytewide FRAM Memory
Download  13 Pages
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メーカー  RAMTRON [Ramtron International Corporation]
ホームページ  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM18L08-70-TG データシート(HTML) 7 Page - Ramtron International Corporation

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FM18L08
Rev. 3.4
July 2007
7 of 13
Read Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 3.0V to 3.65V)
Symbol
Parameter
Min
Max
Units
Notes
tCE
Chip Enable Access Time ( to data valid)
70
ns
tCA
Chip Enable Active Time
70
2,000
ns
tRC
Read Cycle Time
140
ns
tPC
Precharge Time
70
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
15
ns
tOE
Output Enable Access Time
10
ns
tHZ
Chip Enable to Output High-Z
15
ns
1
tOHZ
Output Enable to Output High-Z
15
ns
1
Write Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 3.0V to 3.65V)
Symbol
Parameter
Min
Max
Units
Notes
tCA
Chip Enable Active Time
70
2,000
ns
tCW
Chip Enable to Write High
70
ns
tWC
Write Cycle Time
140
ns
tPC
Precharge Time
70
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
15
ns
tWP
Write Enable Pulse Width
40
ns
tDS
Data Setup
40
ns
tDH
Data Hold
0
ns
tWZ
Write Enable Low to Output High Z
15
ns
1
tWX
Write Enable High to Output Driven
10
ns
1
tHZ
Chip Enable to Output High-Z
15
ns
1
tWS
Write Setup
0
ns
2
tWH
Write Hold
0
ns
2
Notes
1
This parameter is periodically sampled and not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention (VDD = 3.0V to 3.65V)
Parameter
Min
Units
Notes
Data Retention
45
Years
1
Power Cycle Timing (TA = -40° C to + 85° C, VDD = 3.0V to 3.65V)
Symbol
Parameter
Min
Units
Notes
tPU
VDD (min.) to First Access Start
1
µS
tPD
Last Access Complete to VDD (min.)
0
µS
Capacitance (TA = 25° C , f=1 MHz, VDD = 3.3V)
Symbol
Parameter
Max
Units
Notes
CI/O
Input/Output Capacitance (DQ)
8
pF
CIN
Input Capacitance
6
pF


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