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FM20L08 データシート(PDF) 1 Page - Ramtron International Corporation |
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FM20L08 データシート(HTML) 1 Page - Ramtron International Corporation |
1 / 14 page Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.72 May 2007 Page 1 of 14 FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 350 ns Cycle Time System Supervisor • Low Voltage monitor drives external /LVL signal • Write protects memory for low voltage condition • Software programmable block write protect (-TG1 only) Superior to Battery-backed SRAM Modules • No battery concerns • Monolithic reliability • True surface mount solution, no rework steps • Superior for moisture, shock, and vibration • Resistant to negative voltage undershoots Low Power Operation • 3.3V +10%, -5% Power Supply • 22 mA Active Current Industry Standard Configurations • Industrial Temperature -40 ° C to +85° C • 32-pin “Green”/RoHS TSOP (-TG) Description The FM20L08 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and unlimited write endurance make FRAM superior to other types of memory. In-system operation of the FM20L08 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The FRAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM20L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM20L08 includes a voltage monitor function that monitors the power supply voltage. It asserts an active-low signal that indicates the memory is write- protected when VDD drops below a critical threshold. When the /LVL signal is low, the memory is protected against an inadvertent access and data corruption. The FM20L08 also features software-controlled write protection (-TG1 only). The memory array is divided into 8 uniform blocks, each of which can be individually write protected. Device specifications are guaranteed over the industrial temperature range -40°C to +85°C. Pin Configuration Ordering Information FM20L08-60-TG 60 ns access, 32-pin “Green”/RoHS TSOP FM20L08-60-TG1 60 ns access, 32-pin “Green”/RoHS TSOP with software Write Protect 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A11 A9 A8 A13 WE DNU A15 VDD LVL A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 |
同様の部品番号 - FM20L08_07 |
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同様の説明 - FM20L08_07 |
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