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BY12 データシート(PDF) 1 Page - Diotec Semiconductor

部品番号 BY12
部品情報  High Voltage Si-Rectifiers
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メーカー  DIOTEC [Diotec Semiconductor]
ホームページ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BY12 データシート(HTML) 1 Page - Diotec Semiconductor

  BY12 Datasheet HTML 1Page - Diotec Semiconductor  
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BY4 ... BY16
BY4 ... BY16
High Voltage Si-Rectifiers
Si-Hochspannungs-Gleichrichter
Version 2006-09-07
Dimensions - Maße [mm]
Nominal current
Nennstrom
1 A ... 0.3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
4000...16000 V
Plastic case
Kunststoffgehäuse
Ø 6.3 x 21 [mm]
Weight approx.
Gewicht ca.
1.9 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging bulk
Standard Lieferform ungegurtet
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Rep. peak reverse volt.
Period. Spitzensperrspg.
VRRM [V]
Surge peak reverse volt.
Stoßspitzensperrspg.
VRSM [V]
Max. forward current
Dauergrenzstrom
IFAV [A] 1)
Forward volt.
Durchlass-Spg.
VF [V] 2)
BY4
4000
4000
1.0
< 4.0
BY6
6000
6000
1.0
< 6.0
BY8
8000
8000
0.5
< 8.0
BY12
12000
12000
0.5
< 10.0
BY16
16000
16000
0.3
< 15.0
Leakage Current
Sperrstrom
Tj = 25°C
Tj = 100°C
VR = VRRM
VR = VRRM
< 1 µA
< 25 µA
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
100 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 25 K/W 1)
1
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden
2At / Bei IFAV,Tj = 25°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
6.3
Ø 1.2
±0.05


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