2N2369A datasheet(2/2 Pages) SEMICOA

部品番号	2N2369A

部品情報	Silicon NPN Transistor

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メーカー	SEMICOA [Semicoa Semiconductor]

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Copyright

 2002

Semicoa Semiconductors, Inc.

Rev. J

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 2 of 2

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2N2369A

Silicon NPN Transistor

Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C

Off Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10 mA

15

Volts

Collector-Base Cutoff Current

ICBO1

ICBO2

ICBO3

VCB = 40 Volts

VCB = 32 Volts

VCB = 20 Volts, TA = 150°C

10

0.2

30

µA

Collector-Emitter Cutoff Current

ICEX

VCE= 10Volts, VEB= 0.25Volts

TA = 125°C

30

µA

Collector-Emitter Cutoff Current

ICES

VCE = 20 Volts

400

nA

Emitter-Base Cutoff Current

IEBO1

IEBO2

VEB = 4.5 Volts

VEB = 4 Volts

10

0.25

µA

On Characteristics

Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DC Current Gain

hFE1

hFE2

hFE3

hFE4

hFE5

IC = 10 mA, VCE = 0.35 Volts

IC = 30 mA, VCE = 0.4 Volts

IC = 10 mA, VCE = 1 Volts

IC = 100 mA, VCE = 1 Volts

IC = 10 mA, VCE = 1 Volts

TA = -55°C

40

30

40

20

120

Base-Emitter Saturation Voltage

VBEsat1

VBEsat2

VBEsat3

VBEsat4

VBEsat5

IC = 10 mA, IB = 1 mA

IC = 30 mA, IB = 3 mA

IC = 100 mA, IB = 10 mA

IC= 10mA, IB= 1mA,TA=+125°C

IC= 10mA, IB= 1mA, TA = -55°C

0.70

0.80

0.59

0.85

0.90

1.20

1.02

Volts

Collector-Emitter Saturation Voltage

VCEsat1

VCEsat2

VCEsat3

VCEsat4

IC = 10 mA, IB = 1 mA

IC = 30 mA, IB = 3 mA

IC = 100 mA, IB = 10 mA

IC= 10mA, IB= 1mA,TA=+125°C

0.20

0.25

0.45

0.30

Volts

Dynamic Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Magnitude – Common Emitter, Short

Circuit Forward Current Transfer Ratio

|hFE|

VCE = 10 Volts, IC = 10 mA,

f = 100 MHz

5

10

Open Circuit Output Capacitance

COBO

VCB = 5 Volts, IE = 0 mA,

100 kHZ < f < 1 MHz

4

pF

Open Circuit Input Capacitance

CIBO

VEB = 0.5 Volts, IC = 0 mA,

100 kHZ < f < 1 MHz

5

pF

Switching Characteristics

Storage Time

ts

IC = 10 mA, IB1=IB2 = 10 mA

13

ns

Saturated Turn-On Time

tON

IC = 10 mA, IB1= 3 mA,

IB2 = 1.5 mA

12

ns

Saturated Turn-Off Time

tOFF

IC = 10 mA, IB1= 3 mA,

IB2 = 1.5 mA

18

ns

同様の部品番号 - 2N2369A

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