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ML1490 データシート(PDF) 4 Page - LANSDALE Semiconductor Inc. |
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ML1490 データシート(HTML) 4 Page - LANSDALE Semiconductor Inc. |
4 / 8 page www.lansdale.com Page 4 of 8 Issue A LANSDALE Semiconductor, Inc. ML1490 Figure 11. Noise Figure versus Source Resistance Figure 12. Noise Figure versus AGC Gain Reduction Figure 13. Harmonic Distortion versus AGC Gain Reduction for AM Carrier (For Test Circuit, See Figure 14) Figure 14. 10.7 MHz Amplifier Gain 55 dB, BW 100 kHz RS, SOURCE RESISTANCE (Ω) 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 100 200 400 600 1.0 k 2.0 k 4.0 k 10 k f = 30 MHz f = 60 MHz f = 105 MHz VCC = 12 Vdc GR, GAIN REDUCTION (dB) 0 5 10 15 20 25 30 35 40 0 –10 –20 –30 –40 –50 –60 –70 –80 f = 30 MHz Test circuit has tuned input providing a source resistance optimized for best noise figure. BW = 1.0 MHz GR, GAIN REDUCTION (dB) 0 5.0 10 15 20 25 30 35 40 0 10 20 3040 5060 7080 f = 10.7 MHz Modulation: 90 % AM, fm = 1.0 kHz Load at Pin 8 = 2.0 k Ω EO = peak–to–peak envelope of modulated 10.7 MHz carrier at Pin 8 760 mVpp 240 mVpp EO = 2400 mVpp Toroid core (–124 pF) L1 = 24 turns, #22 AWG wire on a T12–44 micro metal L2 = 20 turns, #22 AWG wire on a T12–44 micro metal Toroid core (–100 pF) 0.002 0.002 0.002 L1 +12 Vdc RFC L2 36 pF 1 2 3 4 5 6 7 8 50 Ω Load 82 pF 10.7 MHz (50 Ω Source) VAGC 5.6 k 50–150 pF ML1490 Legacy Applications Information |
同様の部品番号 - ML1490 |
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同様の説明 - ML1490 |
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