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TPCP8901 データシート(PDF) 6 Page - Toshiba Semiconductor

部品番号 TPCP8901
部品情報  TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8901 データシート(HTML) 6 Page - Toshiba Semiconductor

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TPCP8901
2006-11-13
6
Common
1.0
0
0
0.8
1.0
0.8
rth – tw
Pulse width tw (s)
1000
1
0.001
1000
0.01
0.1
1
10
100
10
100
0.6
0.2
0.4
0.2
0.6
0.4
Collector power dissipation at the single-device
operation is 0.83W.
Collector power dissipation at the single-device value at
dual operation is 0.48W.
Collector power dissipation at the dual operation is set
to 0.96W.
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
Single-device operation
Permissible Power Dissipation for
Simultaneous Operation
Permissible power dissipation for Q1
PC (W)
DC operation
Ta
= 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
2)


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