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2SC3422 データシート(PDF) 3 Page - Toshiba Semiconductor |
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2SC3422 データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC3422 2006-11-09 3 Collector-emitter voltage VCE (V) Collector current IC (A) hFE – IC Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VCE (sat) – IC Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) IC – VCE 1 3 10 30 0.1 0.3 1 3 5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.5 10 100 IC max (pulsed)* IC max (continuous)* VCEO max 1 ms* 10 ms* 500 ms* DC operation Tc = 25°C 0 0 Common emitter Tc = 25°C 3.2 1.2 2.4 3.2 5.6 4.0 100 40 30 80 20 IB = 10 mA 0 60 1.6 0.8 0.4 0.8 1.6 2.0 2.4 2.8 4.8 −25 Common emitter VCE = 2 V 0 2.8 0 0.8 1.2 0.4 0.6 Tc = 100°C 25 1.8 0.8 0.2 0.4 1.6 2.0 1.0 1.2 1.4 1.6 2.4 (1) Ta = Tc Infinite heat sink (2) No heat sink 0 40 60 100 80 20 12 0 4 2 6 (1) (2) 120 140 160 8 10 25 0.03 300 Common emitter VCE = 2 V 20 50 100 1000 0.1 0.3 3 Tc = 100°C −25 1 0.01 500 −25 Common emitter IC/IB = 10 1 0.05 0.1 0.3 Tc = 100°C 25 0.03 0.03 0.1 0.3 3 1 0.01 0.01 0.5 |
同様の部品番号 - 2SC3422_06 |
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同様の説明 - 2SC3422_06 |
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