データシートサーチシステム |
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2SC4408 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SC4408 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC4408 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 1.0 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) VCE = 2 V, IC = 1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IC = 0, f = 1 MHz ― 14 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.5 ― Switching time Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― 0.1 ― μs Marking 20 μs 30 V Output IB2 IB1 Input C4408 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
同様の部品番号 - 2SC4408_07 |
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同様の説明 - 2SC4408_07 |
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