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2SC1627 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SC1627
部品情報  Silicon NPN Epitaxial Type (PCT process)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC1627 データシート(HTML) 1 Page - Toshiba Semiconductor

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2SC1627
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
• Complementary to 2SA817
• Driver stage application of 20 to 25 watts amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter saturation voltage
V (BR) CEO
IC = 5 mA, IB = 0
80
V
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 200 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 200 mA, IB = 10 mA
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 5 mA
0.55
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
Note: hFE (1) classification O: 70~140, Y: 120~240
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)


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