2SJ676

2006-11-17

1

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (

π−MOS V)

2SJ676

Switching Regulator, DC/DC Converter and

Motor Drive Applications

Characteristic

Symbol

Rating

Unit

Drain−source voltage

−200

V

−200

V

Gate−source voltage

±20

V

DC

(Note 1)

−2.5

A

Drain current

Pulse(Note 1)

−10

A

Drain power dissipation

1.3

W

Single-pulse avalanche energy

(Note 2)

191

mJ

Avalanche current

−2.5

A

Repetitive avalanche energy (Note 3)

0.13

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to

ambient

96.1

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1B

Weight: 0.54 g (typ.)