STP20NM60 datasheet(4/18 Pages) STMICROELECTRONICS

部品番号	STP20NM60

部品情報	N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

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Electrical characteristics

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60

4/18

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS= Max rating,@125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 10 A

0.25

0.29

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID = 10 A

11

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

1500

350

35

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VGS = 0V, VDS = 0V to

480 V

215

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 20 A,

VGS = 10V

(see Figure 16)

39

10

20

54

nC

Rg

Gate input resistance

f = 1 MHz Gate DC

bias=0 Test signal

level = 20 mV

open drain

1.6

Ω

同様の部品番号 - STP20NM60

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
Inchange Semiconductor ...	STP20NM60	318Kb / 2P	Isc N-Channel MOSFET Transistor
STMicroelectronics	STP20NM60A	309Kb / 12P	N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I짼PAK/TO-220/TO-220FP
STMicroelectronics	STP20NM60FD	341Kb / 15P	N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)
Inchange Semiconductor ...	STP20NM60FD	303Kb / 2P	isc N-Channel Mosfet Transistor

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同様の説明 - STP20NM60

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STF15NM65N	499Kb / 18P	N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STB12NM60N	591Kb / 18P	N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
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	STF19NM65N	532Kb / 19P	N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET
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	STP21NM60N	672Kb / 16P	N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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STP20NM60 データシート(PDF) 4 Page - STMicroelectronics

STP20NM60 データシート(HTML) 4 Page - STMicroelectronics

同様の部品番号 - STP20NM60

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