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BTB24-800B データシート(PDF) 1 Page - STMicroelectronics |
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BTB24-800B データシート(HTML) 1 Page - STMicroelectronics |
1 / 4 page BTB24 B STANDARD TRIACS ® Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) Tc = 90 °C25 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C ) tp = 8.3 ms 260 A tp = 10 ms 250 I2tI2t value tp = 10 ms 312 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 2 . IGT tr ≤ 100ns Repetitive F = 100 Hz 50 A/ µs Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : (dV/dt)c > 10V/ µs DESCRIPTION Symbol Parameter BTB24-... B Unit 400 600 700 800 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 700 800 V ABSOLUTE RATINGS (limiting values) FEATURES The BTB24 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- quired. Application such as phase control and static switching on inductive or resistive load. October 1998 - Ed: 2A 1/4 |
同様の部品番号 - BTB24-800B |
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同様の説明 - BTB24-800B |
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