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M27W800-150F6TR データシート(PDF) 5 Page - STMicroelectronics |
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M27W800-150F6TR データシート(HTML) 5 Page - STMicroelectronics |
5 / 15 page 5/15 M27W800 Table 7. Read Mode DC Characteristics (1) (TA = –40 to 85 °C; VCC = 2.7 to 3.6V; VPP = VCC) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Maximum DC voltage on Output is VCC +0.5V. Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±10 µA ICC Supply Current E = VIL, G = VIL, IOUT = 0mA, f = 8MHz, VCC ≤ 3.6V 30 mA E = VIL, G = VIL, IOUT = 0mA, f = 5MHz, VCC ≤ 3.6V 20 mA ICC1 Supply Current (Standby) TTL E = VIH 1mA ICC2 Supply Current (Standby) CMOS E > VCC – 0.2V, VCC ≤ 3.6V 15 µA IPP Program Current VPP = VCC 10 µA VIL Input Low Voltage –0.6 0.2VCC V VIH (2) Input High Voltage 0.7VCC VCC + 0.5 V VOL Output Low Voltage IOL = 2.1mA 0.4 V VOH Output High Voltage TTL IOH = –400µA 2.4 V Standby Mode The M27W800 has a standby mode which reduc- es the supply current from 20mA to 20µA with low voltage operation VCC ≤ 3.6V, see Read Mode DC Characteristics table for details.The M27W800 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. Two Line Output Control Because EPROMs are usually used in larger memory arrays, this product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the prima- ry device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselect- ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the supplies to the devices. The supply current ICC has three segments of importance to the system designer: the standby current, the active current and the transient peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the ca- pacitive and inductive loading of the device out- puts. The associated transient voltage peaks can be suppressed by complying with the two line out- put control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceram- ic capacitor is used on every device between VCC and VSS. This should be a high frequency type of low inherent inductance and should be placed as close as possible to the device. In addition, a 4.7µF electrolytic capacitor should be used be- tween VCC and VSS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the in- ductive effects of PCB traces. |
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同様の説明 - M27W800-150F6TR |
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