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STPR820DB データシート(PDF) 1 Page - Sirectifier Semiconductors |
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STPR820DB データシート(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STPR805DB thru STPR820DB FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) VF IR Maximum DC Reverse Current At Peak Reverse Voltage @TJ=25 C @TJ=100 C CJ Typical Thermal Resistance (Note 3) TRR Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 1) TJ, TSTG Operating And Storage Temperature Range Maximum Ratings 8.0 100 10 500 45 25 3.0 -55 to +150 A A V Unit uA pF ns o o o ROJC C/W o C o NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Dimensions TO-220AC C A STPR805DB STPR810DB STPR815DB STPR820DB VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 A=Anode, C=Cathode, TAB=Cathode Maximum Forward Voltage IF=8A @TJ=25 C @TJ=150 C 1.3 0.8 o o C(TAB) C A Ultra Fast Recovery Diodes |
同様の部品番号 - STPR820DB |
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同様の説明 - STPR820DB |
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