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STPR820DB データシート(PDF) 1 Page - Sirectifier Semiconductors

部品番号 STPR820DB
部品情報  Ultra Fast Recovery Diodes
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メーカー  SIRECTIFIER [Sirectifier Semiconductors]
ホームページ  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

STPR820DB データシート(HTML) 1 Page - Sirectifier Semiconductors

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STPR805DB thru STPR820DB
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Symbol
Characteristics
I(AV)
Maximum Average Forward Rectified Current
@TC=125 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF
IR
Maximum DC Reverse Current
At Peak Reverse Voltage
@TJ=25 C
@TJ=100 C
CJ
Typical Thermal Resistance (Note 3)
TRR
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
TJ, TSTG
Operating And Storage Temperature Range
Maximum Ratings
8.0
100
10
500
45
25
3.0
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
ROJC
C/W
o
C
o
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min.
Max.
12.70
14.73
14.23
16.51
9.66
10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Inches
Min.
Max.
0.500
0.580
0.560
0.650
0.380
0.420
0.139
0.161
2.300
0.420
0.100
0.135
0.045
0.070
-
0.250
0.025
0.035
0.190
0.210
0.140
0.190
0.015
0.022
0.080
0.115
0.025
0.055
Dimensions TO-220AC
C
A
STPR805DB
STPR810DB
STPR815DB
STPR820DB
VRRM
V
50
100
150
200
VRMS
V
35
70
105
140
VDC
V
50
100
150
200
A=Anode, C=Cathode, TAB=Cathode
Maximum Forward
Voltage
IF=8A
@TJ=25 C
@TJ=150 C
1.3
0.8
o
o
C(TAB)
C
A
Ultra Fast Recovery Diodes


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