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STB75NF20 データシート(PDF) 4 Page - STMicroelectronics |
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STB75NF20 データシート(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STB75NF20 - STP75NF20 - STW75NF20 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 200 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VDS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 37A 0.028 0.034 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS = 15V, ID= 37A 40 S Ciss Coss Crss Input capacitance Output capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS =0 3260 640 110 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 160V, ID=75A, VGS= 10V (see Figure 16) 84 18 34 nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 100V, ID = 37A RG= 4.7Ω, VGS= 10V, (see Figure 15) 53 33 75 29 ns ns ns ns |
同様の部品番号 - STB75NF20 |
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同様の説明 - STB75NF20 |
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