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STD8NS25 データシート(PDF) 3 Page - STMicroelectronics |
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STD8NS25 データシート(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STD8NS25 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 125 V, ID = 4 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 13 ns tr Rise Time 18 ns Qg Total Gate Charge VDD = 200V, ID = 8 A, VGS = 10V 37 50 nC Qgs Gate-Source Charge 5.2 nC Qgd Gate-Drain Charge 14.8 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 4 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 51 16 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 8 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 12.5 12.5 28 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.7 V trr Reverse Recovery Time ISD = 8 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 198 ns Qrr Reverse Recovery Charge 1.1 µC IRRM Reverse Recovery Current 11.3 A |
同様の部品番号 - STD8NS25 |
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同様の説明 - STD8NS25 |
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