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データシートサーチシステム |
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データシートサーチシステム |
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STP19N06L データシート(PDF) 2 Page - STMicroelectronics |
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STP19N06L データシート(HTML) 2 Page - STMicroelectronics |
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2 / 7 page  THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resistance Junction-case Max 1.88 4.29 oC/W Rthj-amb Rthc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 19 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 25 V) 76 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 19 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 13 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating x 0.8 Tc = 125 oC 250 1000 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15 V ± 100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA1 1.7 2.5 V RDS(on) Static Drain-source On Resistance VGS = 5 V ID = 9.5 A VGS = 5 V ID = 9.5 A Tc = 100 oC 0.085 0.1 0.2 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 19 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS > ID(on) x RDS(on)max ID = 9.5 A 7 9 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 700 230 80 900 300 100 pF pF pF STP19N06L/FI 2/7 |
同様の部品番号 - STP19N06L |
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同様の説明 - STP19N06L |
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