STP20NE06LFP datasheet(2/9 Pages) STMICROELECTRONICS

部品番号	STP20NE06LFP

部品情報	N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

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THERMAL DATA

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

2. 14

5

oC/W

Rthj-amb

Rthc-sink

T l

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature F or Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

20

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =35 V)

100

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

60

V

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc = 125

oC

1

10

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID = 250

µA1

1.7

2. 0

V

RDS(on)

Static Drain-source On

Resistance

VGS =5 V

I D =10 A

VGS =10 V

ID =10 A

0.07

0.06

0.085

0.07

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

20

A

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID =10 A

5

9

S

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

800

125

40

pF

STP20NE06L/FP

2/9

同様の部品番号 - STP20NE06LFP

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	STP20NE06L	1Mb / 9P	N-Channel 60 V (D-S) MOSFET

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