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STP20NM50FP データシート(PDF) 2 Page - STMicroelectronics |
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STP20NM50FP データシート(HTML) 2 Page - STMicroelectronics |
2 / 16 page 1 Electrical ratings STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 2/16 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal data Table 3. Avalanche characteristics Symbol Parameter Value Unit TO-220/D²PAK/I²PAK TO-220FP VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 20 20 (Note 3) A ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (Note 3) A IDM Note 2 Drain Current (pulsed) 80 80 (Note 3) A PTOT Total Dissipation at TC = 25°C 192 45 W Derating Factor 1.2 0.36 W/°C dv/dt Note 1 Peak Diode Recovery voltage slope 15 V/ns VISO Insulation Withstand Volatge (DC) -- 2000 V Tj Tstg Operating Junction Temperature Storage Temperature -65 to 150 °C TO-220/D²PAK/I²PAK TO-220FP Unit Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W Rthj-amb Thermal Resistance Junction-amb Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj=25°C, ID=5A, VDD= 50V) 650 mJ |
同様の部品番号 - STP20NM50FP |
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同様の説明 - STP20NM50FP |
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