データシートサーチシステム |
|
STP21N06LFI データシート(PDF) 3 Page - STMicroelectronics |
|
STP21N06LFI データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =30 V ID =10.5A RG =50 Ω VGS =5 V (see test circuit, figure 3) 65 370 95 530 ns ns (di/dt) on Turn-on Current Slope VDD =40 V ID =21 A RG =50 Ω VGS =5 V (see test circuit, figure 5) 130 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =40 V ID =21 A VGS =5 V 18 6 10 26 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =40 V ID =21 A RG =50 Ω VGS =5 V (see test circuit, figure 5) 70 100 180 100 150 260 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 21 84 A A VSD ( ∗) Forward On Volt age ISD =21 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 21 A di/dt = 100 A/ µs VDD =30 V Tj =150 oC (see test circuit, figure 5) 65 0.13 4 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Areas Safe Operating Areas STP21N06L/FI 3/10 |
同様の部品番号 - STP21N06LFI |
|
同様の説明 - STP21N06LFI |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |