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データシートサーチシステム |
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データシートサーチシステム |
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STP6NA60FP データシート(PDF) 3 Page - STMicroelectronics |
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STP6NA60FP データシート(HTML) 3 Page - STMicroelectronics |
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3 / 5 page  ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD = 300 V ID =3 A RG =47 Ω VGS =10 V 35 90 55 125 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =480 V ID =3 A VGS =10 V 54 8 23 75 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =480 V ID =6 A RG =47 Ω VGS =10 V (see test circuit, figure 5) 80 20 115 110 30 155 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 6.5 26 A A VSD ( ∗) Forward On Voltage ISD =6.5 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A di/dt = 100 A/ µs VDD =100 V Tj =150 oC (see circuit, figure 5) 600 9 30 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP6NA60FP 3/5 |
同様の部品番号 - STP6NA60FP |
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同様の説明 - STP6NA60FP |
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