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STP6NC60 データシート(PDF) 3 Page - STMicroelectronics |
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STP6NC60 データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STP6NC60/FP/STB6NC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300 V, ID = 3 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 16 ns tr Rise Time 14 ns Qg Total Gate Charge VDD = 480V, ID = 6 A, VGS = 10V 35 45.5 nC Qgs Gate-Source Charge 5.5 nC Qgd Gate-Drain Charge 17.2 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 6 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 ns tf Fall Time 16 ns tc Cross-over Time 23 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 6 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 450 ns Qrr Reverse Recovery Charge 2.9 µC IRRM Reverse Recovery Current 13 A Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP |
同様の部品番号 - STP6NC60 |
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同様の説明 - STP6NC60 |
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