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STP6NC60 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STP6NC60
部品情報  N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STP6NC60 データシート(HTML) 3 Page - STMicroelectronics

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STP6NC60/FP/STB6NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
16
ns
tr
Rise Time
14
ns
Qg
Total Gate Charge
VDD = 480V, ID = 6 A,
VGS = 10V
35
45.5
nC
Qgs
Gate-Source Charge
5.5
nC
Qgd
Gate-Drain Charge
17.2
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 6 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
13
ns
tf
Fall Time
16
ns
tc
Cross-over Time
23
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
6
A
ISDM (2)
Source-drain Current (pulsed)
24
A
VSD (1)
Forward On Voltage
ISD = 6 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 6 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
450
ns
Qrr
Reverse Recovery Charge
2.9
µC
IRRM
Reverse Recovery Current
13
A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP


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