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FQP12N60C データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FQP12N60C
部品情報  600V N-Channel MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP12N60C データシート(HTML) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C Rev. B1
September 2007
QFET
®
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
D
G
S
Symbol
Parameter
FQP12N60C
FQPF12N60C
Unit
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
12
7.4
12*
7.4*
A
A
IDM
Drain Current
- Pulsed
(Note 1)
48
48*
A
VGSS
Gate-Source voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
870
mJ
IAR
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25°C)
- Derate above 25
°C
225
1.78
51
0.41
W
W/
°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
FQP12N60C
FQPF12N60C
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.56
2.43
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W


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