June 2007

©2007 Fairchild Semiconductor Corporation

FDZ2554P Rev B

www.fairchildsemi.com

1

FDZ2554P

-20V, -6.5A, 28m

Ω

Features

Ultra-thin package: less than 0.80 mm height when mounted

to PCB

Outstanding thermal transfer characteristics: significantly bet-

ter than SO-8

High power and current handling capability

RoHS Compliant

General Description

Combining Fairchild’s advanced 2.5V specified PowerTrench

process with state-of-the-art BGA packaging, the FDZ2554P

drain BGA MOSFET embodies a breakthrough in packaging

technology which enables the device to combine excellent

thermal transfer characteristics, high current handling capability,

Applications

Battery management

Load Switch

Battery protection

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-20

V

Gate to Source Voltage

±12

V

Drain Current -Continuous

(Note 1a)

-6.5

A

-Pulsed

-20

Power Dissipation (Steady State)

(Note 1a)

2.1

W

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

0.6

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

60

Thermal Resistance, Junction to Ambient

(Note 1b)

108

Thermal Resistance, Junction to Ball

(Note 1)

6.3

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

2554P

FDZ2554P

BGA 2.5X4.0

7’’

12 mm

3000 units

S

S

G

G

D

Q1

Q2

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