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TDE1897C データシート(PDF) 5 Page - STMicroelectronics |
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TDE1897C データシート(HTML) 5 Page - STMicroelectronics |
5 / 12 page APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 45 and 55V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 200mJ (at Tj = 85 °C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl L RL [Io – Vcl – Vs RL log 1 + Vs Vcl – Vs ] Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO = ILOAD 3) In normal conditions the operating Junction temperature should remain below 125 °C. Figure 2: Inductive Load Equivalent Circuit Figure 3: Demagnetization Cycle Waveforms -25 0 25 50 75 100 125 Tj (˚C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 α D93IN018 α= RDSON (Tj) RDSON (Tj=25˚C) Figure 4: Normalized RDSON vs. Junction Temperature TDE1897C - TDE1898C 5/12 |
同様の部品番号 - TDE1897C_03 |
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同様の説明 - TDE1897C_03 |
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