STQ1NC60R datasheet(2/9 Pages) STMICROELECTRONICS

部品番号	STQ1NC60R

部品情報	N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH?줚I Power MOSFET

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STQ1NC60R

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ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

0.3

A

ID

Drain Current (continuous) at TC = 100°C

0.19

A

IDM ( )

Drain Current (pulsed)

1.2

A

PTOT

Total Dissipation at TC = 25°C

3.1

W

Derating Factor

0.025

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

TO-92

Rthj-amb

Thermal Resistance Junction-ambient Max

120

°C/W

Rthj-lead

Thermal Resistance Junction-lead Max

40

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

260

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

0.3

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

60

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 30V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

234

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 0.3 A

12

15

Ω

同様の部品番号 - STQ1NC60R

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同様の説明 - STQ1NC60R

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STS1NC60	272Kb / 8P	N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH?줚I MOSFET
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	STD1LNC60	274Kb / 9P	N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH?줚I MOSFET
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	STW12NB60	250Kb / 8P	N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET
	STP2HNC60	328Kb / 9P	N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh?줚I MOSFET
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	STP6LNC60FP	324Kb / 9P	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh?줚I MOSFET

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STQ1NC60R データシート(PDF) 2 Page - STMicroelectronics

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