1N3889 datasheet(3/11 Pages) VISHAY

部品番号	1N3889

部品情報	Fast Recovery Diodes(Stud Version)

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Document Number: 93138

For technical questions, contact: ind-modules@vishay.com

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Revision: 26-Sep-08

3

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Vishay High Power Products

Note

(1) JEDEC registered values

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

1N3879.

1N3883.

1N3889.

1N3893.

6FL..

12FL..

16FL..

UNITS

S02

S05

Maximum reverse

recovery time

trr

TJ = 25 °C, IF = 1 A to VR = 30 V,

dIF/dt = 100 A/µs

150

-

ns

TJ = 25 °C, dIF/dt = 25 A/µs,

IFM = π x rated IF(AV)

300 (1)

200

500

Maximum peak

recovery current

IRM(REC)

IFM = π x rated IF(AV)

4 (1)

5 (1)

--

Maximum reverse

recovery charge

Qrr

TJ = 25 °C, IF = 1 A to VR = 30 V,

dIF/dt = 100 A/µs

400

350

-

nC

TJ = 25 °C, dIF/dt = 25 A/µs,

IFM = π x rated IF(AV)

400

-

I

FM

t

rr

dir

dt

I

RM(REC)

Q

rr

t

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

1N3879.

1N3883.

6FL..

1N3889.

1N3893.

12FL..

16FL..

UNITS

Maximum junction operating

temperature range

TJ

- 65 to 150

°C

Maximum storage temperature range

TStg

- 65 to 175

Maximum thermal resistance,

junction to case

RthJC

DC operation

2.5

2.0

1.6

°C/W

Maximum thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth,

flat and greased

0.5

Allowable mounting torque

Not lubricated threads

1.5 + 0 - 10 %

(13)

N · m

(lbf · in)

Lubricated threads

1.2 + 0 - 10 %

(10)

Approximate weight

7g

0.25

oz.

Case style

JEDEC

DO-203AA (DO-4)

同様の部品番号 - 1N3889

メーカー	部品番号	データシート	部品情報
Microsemi Corporation	1N3889	111Kb / 2P	Fast Recovery Rectifier
GeneSiC Semiconductor, ...	1N3889	706Kb / 3P	Silicon Fast Recovery Diode
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International Rectifier	1N3889	315Kb / 8P	6A, 12A AND 16A FAST RECOVERY RECTIFIERS

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同様の説明 - 1N3889

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