データシートサーチシステム |
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STK850 データシート(PDF) 4 Page - STMicroelectronics |
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STK850 データシート(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STK850 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 15A VGS= 4.5V, ID= 15A 0.0024 0.0029 0.0029 0.0035 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 3150 940 90 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID = 30A VGS =4.5V (see Figure 16) 24.5 8 8.2 32.5 nC nC nC Qgs1 Qgs2 Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=15V, ID = 12A VGS =4.5V (see Figure 21) 0.6 7.2 nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 1.1 Ω |
同様の部品番号 - STK850_07 |
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同様の説明 - STK850_07 |
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