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STP130NH02L データシート(PDF) 4 Page - STMicroelectronics |
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STP130NH02L データシート(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STP130NH02L 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 25mA VGS= 0 24 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, TC=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 100 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1V RDS(on) Static drain-source on resistance VGS = 10V , ID = 45A VGS = 5V, ID = 22.5A 0.0034 0.005 0.0044 0.008 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS = 10V, ID = 45A 55 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1MHz, VGS = 0 4450 1126 141 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Off voltage rise time Fall time VDD = 10V, ID = 45A, RG = 4.7Ω, VGS = 10V (see Figure 13) 14 224 69 40 ns ns ns ns Rg Gate input resistance f = 1MHz gate DC bias=0 test signal level=20mV open drain 1.6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=10V, ID = 90A VGS =10V (see Figure 14) 69 13 9 93 nC nC nC Qoss (2) 2. Qoss = Coss* ∆V IN, Coss = Cgd + Cds. See power losses calculation Output charge VDS = 16V, VGS = 0 27 ns Qgls (3) 3. Gate charge for synchronous operation. Third-quadrant gate charge VDS < 0, VGS= 10V 64 ns |
同様の部品番号 - STP130NH02L |
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同様の説明 - STP130NH02L |
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