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IRLZ14SPBF データシート(PDF) 1 Page - Vishay Siliconix

部品番号 IRLZ14SPBF
部品情報  Power MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRLZ14SPBF データシート(HTML) 1 Page - Vishay Siliconix

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Document Number: 90414
www.vishay.com
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
1
Power MOSFET
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Surface Mount (IRLZ14S/SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L/SiHLZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D2PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRLZ44L/SiHLZ44L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 790 µH, RG = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRLZ14/SiHLZ14 data and test conditions.
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)VGS = 5 V
0.20
Qg (Max.) (nC)
8.4
Qgs (nC)
3.5
Qgd (nC)
6.0
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRLZ14SPbF
IRLZ14STRRPbFa
-
SiHLZ14S-E3
SiHLZ14STR-E3a
-
SnPb
IRLZ14S
IRLZ14TRRa
IRLZ14L
SiHLZ14S
SiHLZ14TRa
SiHLZ14L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltagee
VDS
60
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5 V
TC = 25 °C
ID
10
A
TC = 100 °C
7.2
Pulsed Drain Currenta, e
IDM
40
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energyb, e
EAS
68
mJ
Maximum Power Dissipation
TC = 25 °C
PD
43
W
TA = 25 °C
3.7
Peak Diode Recovery dV/dtc, e
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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