SI1023X-T1-E3 datasheet(3/5 Pages) VISHAY

部品番号	SI1023X-T1-E3

部品情報	Dual P-Channel 20-V (D-S) MOSFET

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3 / 5 page

Document Number: 71169

S-80643-Rev. B, 24-Mar-08

www.vishay.com

3

Vishay Siliconix

Si1023X

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.0

0.8

1.6

2.4

3.2

4.0

0

200

400

600

800

1000

ID - Drain Current (mA)

VGS = 1.8 V

VGS = 4.5 V

VGS = 2.5 V

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VDS = 10 V

ID = 250 mA

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1000

1

VSD -)

V

(

e

g

a

t

l

o

V

n

i

a

r

D

-

o

t

-

e

c

r

u

o

S

TJ = 125 °C

TJ = 25 °C

TJ = - 55 °C

10

100

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

20

40

60

80

100

120

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VGS = 0 V

f = 1 MHz

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

VGS = 4.5 V

ID = 350 mA

TJ -Junction Temperature (°C)

VGS = 1.8 V

ID = 150 mA

0

1

2

3

4

5

0123456

ID = 350 mA

VGS - Gate-to-Source Voltage (V)

ID = 200 mA

同様の部品番号 - SI1023X-T1-E3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1023X	40Kb / 4P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 08-Feb-01
	SI1023X	144Kb / 7P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1023X	144Kb / 7P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI1023X-T1-E3

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