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SI1025X データシート(PDF) 2 Page - Vishay Siliconix |
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SI1025X データシート(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Vishay Siliconix Si1025X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 10 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 0.25 mA - 1 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 200 nA VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 50 V, VGS = 0 V - 25 VDS = - 50 V, VGS = 0 V, TJ = 85 °C - 250 On-State Drain Currenta ID(on) VDS = - 10 V, VGS = - 4.5 V - 50 mA VDS = - 10 V, VGS = - 10 V - 600 Drain-Source On-Resistancea RDS(on) VGS = - 4.5 V, ID = - 25 mA 8 Ω VGS = - 10 V, ID = - 500 mA 4 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6 Forward Transconductancea gfs VDS = - 10 V, ID = - 100 mA 100 mS Diode Forward Voltagea VSD IS = - 200 mA, VGS = 0 V - 1.4 V Dynamicb Total Gate Charge Qg VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA 1.7 nC Gate-Source Charge Qgs 0.26 Gate-Drain Charge Qgd 0.46 Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 23 pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switchingb, c Turn-On Time tON VDD = - 25 V, RL = 150 Ω, ID ≅ - 165 mA, VGEN = - 10 V, RG = 10 Ω 20 ns Turn-Off Time tOFF 35 Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 012345 VDS - Drain-to-Source Voltage (V) VGS = 10 V 5 V 4 V 6 V 7 V 8 V Transfer Characteristics 0 300 600 900 1200 0246 8 10 VGS - Gate-to-Source Voltage (V) TJ = - 55 °C 125 °C 25 °C |
同様の部品番号 - SI1025X_08 |
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同様の説明 - SI1025X_08 |
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