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SI1025X データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI1025X
部品情報  P-Channel 60-V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 71433
S-80643-Rev. B, 24-Mar-08
Vishay Siliconix
Si1025X
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
- 60
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 0.25 mA
- 1
- 3.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
± 200
nA
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = - 50 V, VGS = 0 V
- 25
VDS = - 50 V, VGS = 0 V, TJ = 85 °C
- 250
On-State Drain Currenta
ID(on)
VDS = - 10 V, VGS = - 4.5 V
- 50
mA
VDS = - 10 V, VGS = - 10 V
- 600
Drain-Source On-Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 25 mA
8
Ω
VGS = - 10 V, ID = - 500 mA
4
VGS = - 10 V, ID = - 500 mA, TJ = 125 °C
6
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 100 mA
100
mS
Diode Forward Voltagea
VSD
IS = - 200 mA, VGS = 0 V
- 1.4
V
Dynamicb
Total Gate Charge
Qg
VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA
1.7
nC
Gate-Source Charge
Qgs
0.26
Gate-Drain Charge
Qgd
0.46
Input Capacitance
Ciss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
23
pF
Output Capacitance
Coss
10
Reverse Transfer Capacitance
Crss
5
Switchingb, c
Turn-On Time
tON
VDD = - 25 V, RL = 150 Ω, ID ≅ - 165 mA,
VGEN = - 10 V, RG = 10 Ω
20
ns
Turn-Off Time
tOFF
35
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
VGS = 10 V
5 V
4 V
6 V
7 V
8 V
Transfer Characteristics
0
300
600
900
1200
0246
8
10
VGS - Gate-to-Source Voltage (V)
TJ = - 55 °C
125 °C
25 °C


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