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SI1029X データシート(PDF) 2 Page - Vishay Siliconix |
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SI1029X データシート(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Vishay Siliconix Si1029X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA N-Ch 60 V VGS = 0 V, ID = - 10 µA P-Ch - 60 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 2.5 VDS = VGS, ID = - 250 µA P-Ch - 1 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 5 V N-Ch ± 50 nA P-Ch ± 100 VDS = 0 V, VGS = ± 10 V N-Ch ± 150 P-Ch ± 200 Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V N-Ch 10 VDS = - 50 V, VGS = 0 V P-Ch - 25 VDS = 50 V, VGS = 0 V, TJ = 85 °C N-Ch 100 VDS = - 50 V, VGS = 0 V, TJ = 85 °C P-Ch - 250 On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V N-Ch 500 mA VDS = - 10 V, VGS = - 4.5 V P-Ch - 50 VDS = 7.5 V, VGS = - 4.5 V N-Ch 800 VDS = - 10 V, VGS = - 10 V P-Ch - 600 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA N-Ch 3 Ω VGS = - 4.5 V, ID = - 25 mA P-Ch 8 VGS = 10 V, ID = 500 mA N-Ch 1.40 VGS = - 10 V, ID = - 500 mA P-Ch 4 VGS = 10 V, ID = 500 mA, TJ = 125 °C N-Ch 2.50 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C P-Ch 6 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA N-Ch 200 ms VDS = - 10 V, ID = - 100 mA P-Ch 100 Diode Forward Voltagea VSD IS = 200 mA, VGS = 0 V N-Ch 1.4 V IS = - 200 mA, VGS = 0 V P-Ch - 1.4 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 30 V, VGS = - 15 V, ID = - 500 mA N-Ch 750 pC P-Ch 1700 Gate-Source Charge Qgs N-Ch 75 P-Ch 260 Gate-Drain Charge Qgd N-Ch 225 P-Ch 460 Input Capacitance Ciss N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Ch 30 pF P-Ch 23 Output Capacitance Coss N-Ch 6 P-Ch 10 Reverse Transfer Capacitance Crss N-Ch 3 P-Ch 5 Turn-On Timec tON N-Channel VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω N-Ch 15 ns P-Ch 20 Turn-Off Timec tOFF P-Channel VDD = - 25 V, RL = 150 Ω ID ≅ - 165 mA, VGEN = - 10 V, RG = 10 Ω N-Ch 20 P-Ch 35 |
同様の部品番号 - SI1029X_08 |
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同様の説明 - SI1029X_08 |
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