SI1031R datasheet(2/5 Pages) VISHAY

部品番号	SI1031R

部品情報	P-Channel 20-V (D-S) MOSFET

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Document Number: 71171

S-81543-Rev. C, 07-Jul-08

Vishay Siliconix

Si1031R/X

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.40

- 1.2

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 2.8 V

± 0.5

± 1.0

µA

VDS = 0 V, VGS = ± 4.5 V

± 1.0

± 2.0

Zero Gate Voltage Drain Current

IDSS

VDS = - 16 V, VGS = 0 V

- 1

- 500

nA

VDS = - 16 V, VGS = 0 V, TJ = 85 °C

- 10

µA

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 200

mA

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 150 mA

8

Ω

VGS = - 2.5 V, ID = - 125 mA

12

VGS = - 1.8 V, ID = - 100 mA

15

VGS = - 1.5 V, ID = - 30 mA

20

Forward Transconductancea

gfs

VDS = - 10 V, ID = 150 mA

0.4

S

Diode Forward Voltagea

VSD

IS = - 150 mA, VGS = 0 V

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA

1500

pC

Gate-Source Charge

Qgs

150

Gate-Drain Charge

Qgd

450

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 65 Ω

ID ≅ - 150 mA, VGEN = - 4.5 V, RG = 10 Ω

55

ns

Rise Time

tr

30

Turn-Off Delay Time

td(off)

60

Fall Time

tf

30

Output Characteristics

0.0

0.1

0.2

0.3

0.4

0.5

0123456

VGS = 5 thru 2.5 V

2 V

VDS - Drain-to-Source Voltage (V)

1.8 V

Transfer Characteristics

0

100

200

300

400

500

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TJ = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

同様の部品番号 - SI1031R

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