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SI1046X データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI1046X
部品情報  N-Channel 20-V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 74594
S-81543-Rev. B, 07-Jul-08
Vishay Siliconix
Si1046X
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
20.5
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.12
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.35
0.95
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 30
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 85 °C
10
On-State Drain Currenta
ID(on)
VDS = ≥ 5 V, VGS = 4.5 V
2.5
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 0.606 A
0.336
0.420
Ω
VGS = 2.5 V, ID = 0.505 A
0.395
0.501
VGS = 1.8 V, ID = 0.150 A
0.438
0.660
Forward Transconductance
gfs
VDS = 10 V, ID = 0.606 A
2.1
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
66
pF
Output Capacitance
Coss
17
Reverse Transfer Capacitance
Crss
7
Total Gate Charge
Qg
VDS = 10 V, VGS = 5 V, ID = 0.606 A
0.99
1.49
nC
VDS = 10 V, VGS = 4.5 V, ID = 0.606 A
0.92
1.38
Gate-Source Charge
Qgs
0.15
Gate-Drain Charge
Qgd
0.30
Gate Resistance
Rg
f = 1 MHz
212
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 20.8 Ω
ID ≅ 0.48 A, VGEN = 4.5 V, Rg = 1 Ω
17
26
ns
Rise Time
tr
19
28.5
Turn-Off Delay Time
td(off)
76
114
Fall Time
tf
27
41
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
2.5
A
Body Diode Voltage
VSD
IS = 0.48 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.0 A, dI/dt = 100 A/µs
16
24
nC
Body Diode Reverse Recovery Charge
Qrr
4.8
7.2
ns
Reverse Recovery Fall Time
ta
12.3
Reverse Recovery Rise Time
tb
3.7


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