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SI1050X-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI1050X-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 73896 S-80641-Rev. B, 24-Mar-08 Vishay Siliconix Si1050X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 8V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 18.2 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.55 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.35 0.9 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 8 V, VGS = 0 V 1nA VDS = 8 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 6 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.34 A 0.071 0.086 Ω VGS = 2.5 V, ID = 1.29 A 0.078 0.093 VGS = 1.8 V, ID = 1.23 A 0.085 0.102 VGS = 1.5 V, ID = 0.76 A 0.092 0.120 Forward Transconductance gfs VDS = 4 V, ID = 1.34 A 4.12 S Dynamicb Input Capacitance Ciss VDS = 4 V, VGS = 0 V, f = 1 MHz 585 pF Output Capacitance Coss 190 Reverse Transfer Capacitance Crss 130 Total Gate Charge Qg VDS = 4 V, VGS = 5 V, ID = 1.34 A 7.7 11.6 nC VDS = 4 V, VGS = 4.5 V, ID = 1.34 A 7.1 10.7 Gate-Source Charge Qgs 1.14 Gate-Drain Charge Qgd 1.69 Gate Resistance Rg f = 1 MHz 3.5 4.6 Ω Turn-On Delay Time td(on) VDD = 4 V, RL = 3.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω 6.8 10.2 ns Rise Time tr 35 53 Turn-Off DelayTime td(off) 25 37.5 Fall Time tf 69 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 6A Body Diode Voltage VSD IS = 1.0 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/µs 18.5 28 nC Body Diode Reverse Recovery Charge Qrr 3.7 5.7 ns Reverse Recovery Fall Time ta 6.7 Reverse Recovery Rise Time tb 11.8 |
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同様の説明 - SI1050X-T1-E3 |
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