SI1330EDL-T1 datasheet(2/5 Pages) VISHAY

部品番号	SI1330EDL-T1

部品情報	N-Channel 60-V (D-S) MOSFET

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Si1330EDL

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72861

S-40853—Rev. A, 03-May-04

SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

2.0

2.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "10 V

"1

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V, TJ = 55_C

10

m

VGS = 10 V, VDS = 7.5 V

0.5

On-State Drain Currentb

ID(on)

VGS = 4.5 V, VDS = 10 V

0.4

A

D(on)

VGS = 3 V, VDS = 10 V

0.05

VGS = 10 V, ID = 0.25 A

1.0

2.5

Drain-Source On-Resistanceb

rDS(on)

VGS = 4.5 V, ID = 0.2 A

1.4

3

W

DS(on)

VGS = 3 V, ID = 0.025 A

3.0

8

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.25 A

350

mS

Diode Forward Voltage

VSD

IS = 0.23 A, VGS = 0 V

0.83

1.2

V

Dynamicb

Total Gate Charge

Qg

V

10 V V

45 V

0.4

0.6

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V

ID ^ 0.25 A

0.11

nC

Gate-Drain Charge

Qgd

ID ^ 0.25 A

0.15

Gate Resistance

Rg

173

W

Turn On Time

td(on)

3.8

10

Turn-On Time

tr

VDD = 30 V, RL = 150 W

ID ^ 02 A VGEN = 10V

4.8

15

ns

Turn-Off Time

td(off)

ID ^ 0.2 A, VGEN = 10V

Rg = 10 W

12.8

20

ns

Turn-Off Time

tf

Rg 10 W

9.6

15

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

012345

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS = 10, 7 V

3 V

5 V

4 V

VGS − Gate-to-Source Voltage (V)

TJ = −55_C

125_C

25_C

6 V

1.0

0.8

0.6

0.2

0

0.4

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