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SI1499DH-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI1499DH-T1-E3
部品情報  P-Channel 1.2-V (G-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 73338
S-80579-Rev. E, 17-Mar-08
Vishay Siliconix
Si1499DH
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 8
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 9
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.35
- 0.8
V
VDS = VGS, ID = ± 5 mA
- 0.55
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = - 4.5 V
- 6.5
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 2.0 A
0.0622
0.078
Ω
VGS = - 2.5 V, ID = - 1.9 A
0.078
0.095
VGS = - 1.8 V, ID = - 0.8 A
0.094
0.115
VGS = - 1.5 V, ID = - 0.5 A
0.118
0.153
VGS = - 1.2 V, ID = - 0.100 A
0.424
Forward Transconductancea
gfs
VDS = - 4 V, ID = - 2.0 A
8S
Dynamicb
Input Capacitance
Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
650
pF
Output Capacitance
Coss
220
Reverse Transfer Capacitance
Crss
122
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 4.5 V, ID = - 1.6 A
10.5
16
nC
Gate-Source Charge
Qgs
1.3
Gate-Drain Charge
Qgd
1.9
Gate Resistance
Rg
f = 1 MHz
9.5
Ω
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 2 Ω
ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
914
ns
Rise Time
tr
40
60
Turn-Off Delay Time
td(off)
50
75
Fall Time
tf
60
90
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 2 Ω
ID ≅ - 2 A, VGEN = - 8 V, Rg = 1 Ω
815
Rise Time
tr
40
60
Turn-Off Delay Time
td(off)
46
70
Fall Time
tf
60
90
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 1.6
A
Pulse Diode Forward Current
ISM
- 6.5
Body Diode Voltage
VSD
IS = - 2.4 A, VGS = 0 V
- 0.7
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
25
38
ns
Body Diode Reverse Recovery Charge
Qrr
711
nC
Reverse Recovery Fall Time
ta
9
ns
Reverse Recovery Rise Time
tb
16


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