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SI1551DL データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI1551DL
部品情報  Complementary 20-V (D-S) MOSFET
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Si1551DL
Vishay Siliconix
www.vishay.com
2
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.5
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
P-Ch
−0.6
−1.5
V
Gate Body Leakage
IGSS
VDS = 0 V VGS = "12 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
P-Ch
"100
nA
VDS = 20 V, VGS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
IDSS
VDS = −20 V, VGS = 0 V
P-Ch
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 85_C
N-Ch
5
mA
VDS = −20 V, VGS = 0 V, TJ = 85_C
P-Ch
−5
On State Drain Currenta
ID( )
VDS w 5 V, VGS = 4.5 V
N-Ch
0.6
A
On-State Drain Currenta
ID(on)
VDS p −5 V, VGS = −4.5 V
P-Ch
−1.0
A
VGS = 4.5 V, ID = 0.29 A
N-Ch
1.55
1.9
VGS = −4.5 V, ID = −0.41 A
P-Ch
0.850
0.995
Drain Source On State Resistancea
rDS( )
VGS = 2.7 V, ID = 0.1 A
N-Ch
2.8
3.7
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −2.7 V, ID = −0.25 A
P-Ch
1.23
1.600
W
VGS = 2.5 V, ID = 0.1 A
N-Ch
3.0
4.2
VGS = −2.5 V, ID = −0.25 A
P-Ch
1.4
1.800
Forward Transconductancea
gf
VDS = 10 V, ID = 0.29 A
N-Ch
0.3
S
Forward Transconductancea
gfs
VDS = −10 V, ID = −0.41 A
P-Ch
0.8
S
Diode Forward Voltagea
VSD
IS = 0.23 A, VGS = 0 V
N-Ch
0.8
1.2
V
Diode Forward Voltagea
VSD
IS = −0.23 A, VGS = 0 V
P-Ch
−0.8
−1.2
V
Dynamicb
Total Gate Charge
Qg
N-Ch
0.72
1.5
Total Gate Charge
Qg
N-Channel
P-Ch
0.52
1.8
Gate Source Charge
Q
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.29 A
N-Ch
0.22
nC
Gate-Source Charge
Qgs
P-Channel
V
10 V V
45 V I
0 41 A
P-Ch
0.11
nC
Gate Drain Charge
Q d
VDS = −10 V, VGS = −4.5 V, ID = −0.41 A
N-Ch
0.13
Gate-Drain Charge
Qgd
P-Ch
0.14
Turn On Delay Time
td( )
N-Ch
23
40
Turn-On Delay Time
td(on)
P-Ch
7.5
15
Rise Time
t
N-Channel
VDD = 10 V, RL = 20 W
N-Ch
30
60
Rise Time
tr
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
P-Ch
20
40
Turn Off Delay Time
td( ff)
g
P-Channel
V
10 V R
20 W
N-Ch
10
20
ns
Turn-Off Delay Time
td(off)
VDD = −10 V, RL = 20 W
ID ^ −0.5 A, VGEN = −4.5 V, Rg = 6 W
P-Ch
8.5
17
ns
Fall Time
tf
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
N-Ch
15
30
Fall Time
tf
P-Ch
12
24
Source-Drain
t
IF = 0.23 A, di/dt = 100 A/ms
N-Ch
20
40
Source-Drain
Reverse Recovery Time
trr
IF = −0.23 A, di/dt = 100 A/ms
P-Ch
25
40
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.


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