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SI1912EDH データシート(PDF) 4 Page - Vishay Siliconix |
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SI1912EDH データシート(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si1912EDH Vishay Siliconix New Product www.vishay.com 4 Document Number: 71408 S-03176—Rev. A, 05-Mar-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 –25 0 25 50 75 100 125 150 ID = 100 mA 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1234 5 0.1 1 2 ID = 1.13 A 0 0.2 0.6 0.8 Threshold Voltage TJ – Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0 1 5 Single Pulse Power, Junction-to-Ambient Time (sec) 3 4 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 170_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 600 10 0.1 0.01 TJ = 25_C 2 TJ = 150_C 0.4 100 |
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同様の説明 - SI1912EDH |
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