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SI1958DH-T1-E3 データシート(PDF) 3 Page - Vishay Siliconix |
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SI1958DH-T1-E3 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 74340 S-70532-Rev. B, 26-Mar-07 www.vishay.com 3 Vishay Siliconix Si1958DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 10 V thru 3.5 V VDS - Drain-to-Source Voltage (V) VGS = 3 V VGS = 2 V VGS = 1.5 V VGS = 2.5 V 0.0 0.1 0.2 0.3 0.4 0.5 012 34 VGS = 2.5 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID = 1.5 A Qg - Total Gate Charge (nC) VDS = 10 V VDS = 16 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C 0 40 80 120 160 0 4 8 121620 Crss VDS - Drain-Source Voltage (V) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 4.5 V, 2.5 V ID = 1.3 A |
同様の部品番号 - SI1958DH-T1-E3 |
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同様の説明 - SI1958DH-T1-E3 |
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