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2SC2551 データシート(PDF) 1 Page - Toshiba Semiconductor |
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2SC2551 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC2551 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complementary to 2SA1091. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 300 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 0.1 μA Collector-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 300 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 300 ⎯ ⎯ V hFE (1) (Note) VCE = 10 V, IC = 20 mA 30 ⎯ 150 DC current gain hFE (2) VCE = 10 V, IC = 1 mA 20 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 2 mA ⎯ ⎯ 0.5 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 2 mA ⎯ ⎯ 1.2 V Transition frequency fT VCE = 10 V, IC = 20 mA 50 80 ⎯ MHz Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz ⎯ 3 4 pF Note: hFE (1) classification R: 30~90, O: 50~150 Industrial Applications Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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