TP0610T datasheet(2/4 Pages) SUTEX

部品番号	TP0610T

部品情報	P-Channel Enhancement-Mode Vertical DMOS FETs

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メーカー	SUTEX [Supertex, Inc]

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PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

TP0610T

Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ T

A = 25°C

°C/W

SOT-23

-120mA

-400mA

0.36W

200

350

-120mA

-400mA

* I

D (continuous) is limited by max rated Tj.

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-60

V

VGS = 0V, ID = -10µA

VGS(th)

Gate Threshold Voltage

-1.0

-2.4

V

VGS = VDS, ID = -1.0mA

∆VGS(th)

Change in V

GS(th) with Temperature

6.5

mV/°CVGS = VDS, ID = -1.0mA

IGSS

Gate Body Leakage

±10

nA

VGS = ±20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

-1

µAVGS = 0V, VDS = Max Rating

-200

µAVGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

I

D(ON)

ON-State Drain Current

-50

mA

V

GS = -4.5V, VDS = -10V

RDS(ON)

25

Ω

VGS = -4.5V, ID = -25mA

10

Ω

VGS = -10V, ID = -0.2A

∆RDS(ON)

Change in R

DS(ON) with Temperature

1.0

%/°CVGS = -10V, ID = -0.2A

GFS

Forward Transconductance

60

m

VDS = -10V, ID = -0.1A

CISS

Input Capacitance

60

C

OSS

Common Source Output Capacitance

30

pF

CRSS

Reverse Transfer Capacitance

10

t

d(ON)

Turn-ON Delay Time

10

t

r

Rise Time

15

td(OFF)

Turn-OFF Delay Time

15

t

f

Fall Time

20

V

SD

Diode Forward Voltage Drop

-2.0

V

GS = 0V, ISD = -0.12A

trr

Reverse Recovery Time

400

ns

VGS = 0V, ISD = -0.4A

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

Static Drain-to-Source

ON-State Resistance

VGS = 0V, VDS = -25V

f = 1 MHz

VDD = -25V

ns

I

D = -0.18A

RGEN = 25Ω

Switching Waveforms and Test Circuit

同様の部品番号 - TP0610T

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	TP0610T	62Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. H, 05-Jul-04
Vishay Siliconix	TP0610T	75Kb / 5P	P-Channel 60-V (D-S) MOSFET Rev. H, 05-Jul-04
Supertex, Inc	TP0610T	656Kb / 5P	P-Channel Enhancement Mode Vertical DMOS FETs
Microchip Technology	TP0610T	1Mb / 14P	P-Channel Enhancement-Mode Vertical DMOS FET 05/14/19
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